The International Conference on Radiation Effects of Electronic Devices, ICREED, is a biannual international conference sponsored by IEEE China and Chinese Nuclear Society. It’s an important and high-level conference for Chinese radiation effects community, same as IEEE Nuclear & Space Radiation Effects Conference (NSREC) in US and European Conference on Radiation and its Effects on Components and Systems (RADECS).

The aim of ICREED conferences is to provide a forum for the presentations and discussions of the latest advances in the field of radiation effects on electronic materials, devices, circuits, sensors, and systems. The scope of the conference encompasses technological processes and design techniques for producing radiation tolerant systems for space, aeronautical or terrestrial applications, as well as relevant methodologies for their characterization and qualification. 

1st ICREED (2015)

The first ICREED was held in Harbin, China from October 19 to 21, 2015, hosted by Harbin Institute of technology, and organized by State Key Laboratory of Intense Pulsed Radiation Simulation and Effects, National Key Laboratory of Analog Integrated Circuits and Shandong Institute of Aerospace Electronic Technology. Professor Guo Bin from Harbin Institute of technology and Professor Kenneth Galloway from Vanderbilt University served as the Chinese and foreign chairmen of the meeting. More than 160 participants attended the meeting. Among them, 17 well-known experts and scholars from the United States, Germany, Italy, Russia and China presented invited talks.

2nd ICREED (2018)

 The 2nd ICREED, combined with RADECS Workshop 2018, was held in Beijing from May 16 to 18, 2018, hosted by China Academy of Aerospace Electronics Technology, and organized by Beijing Institute of Microelectronics Technology and Harbin Institute of Technology. RADECS had paid high attention to this conference and sent a professional delegation composed of 6 experts to attend the conference. At the same time, more than 40 foreign experts from 15 countries including France, the United States and Russia, and experts and scholars from more than 60 domestic research institutions and universities including China Aerospace Science and Technology Group Co., Ltd., Chinese Academy of Sciences, China Electronics Technology Group Co., Ltd. and Harbin Institute of technology, with a total number of more than 260 guests, attended the conference.

3rd ICREED (2019)

 The 3rd ICREED was held in Chongqing from May 29 to 31, 2019, hosted by Xinjiang Technical Institute of Physics and Chemistry of Chinese Academy of Sciences, National Key Laboratory of Analog Integrated Circuits, Harbin Institute of Technology. More than 260 scholars were participated the event, including 15 foreign experts from the United States, France, Italy, Russia and Japan, and 110 conference papers were presented in the form of oral and poster presentations. At the same time, ICREED steering committee with 26 members, and technical committee, with 50 members, were confirmed. All members of these two committees are experts, with space technology and radiation effects background, come from all around the world. 

4th ICREED (2021)

 The 4th ICREED was held in Xi'an from May 26 to 29, 2021, hosted by Xi'an Jiaotong University, Xi'an Microelectronic Technology Institute, Laboratory of Science and Technology on Radiation-Hardened Integrated Circuits. Despite the worldwide COVID-19 effect, more than 400 participants registered the conference, and about 100 of them attended the event in on-line form.7 foreign experts and 10 domestic young scientists gave keynote speeches, and 60 technical oral presentations and 70 posters were presented during the conference. The contents of presentations and posters covered the latest progress and achievements in radiation effect mechanism, radiation effect modeling, radiation testing and radiation resistance reinforcement technology of electronic components and electronic systems in space and nuclear radiation environment.

5th ICREED (2023)

 The 5th ICREED was held in Kunming from May 24 to 27, 2023, hosted by Yunnan Normal University, Yangzhou University, National Innovation Center of Radiation Application, National Key Laboratory of Integrated Circuits and Microsystems, Laboratory of Science and Technology on Radiation Hardened Integrated Circuits, National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component. More than 350 participants attended the meeting, including 12 foreign experts from the United States, Russia, France and Italy. 12 well-known experts gave keynote speeches, and 70 technical oral presentations and 154 posters were presented during the meeting.

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